Gate Charge Qg Max / Vgs20 nC @ 10 V
Current / Continuous Drain Id / 25c6.2A (Ta)
Vgs Max±20V
Vgsth Max / Id2.3V @ 250µA
Drive Voltage Max Rds On Min Rds On4.5V, 10V
Rds On Max / Id Vgs20mOhm @ 6.2A, 10V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss30 V
Input Capacitance Ciss Max / Vds600 pF @ 15 V
Fet TypeN-Channel
Power Dissipation Max1.3W (Ta)