Gate Charge Qg Max / Vgs16 nC @ 10 V
Current / Continuous Drain Id / 25c4A (Ta)
Vgs Max±12V
Vgsth Max / Id1.5V @ 250µA
Drive Voltage Max Rds On Min Rds On2.5V, 10V
Rds On Max / Id Vgs50mOhm @ 4A, 10V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss30 V
Input Capacitance Ciss Max / Vds340 pF @ 15 V
Fet TypeN-Channel
Power Dissipation Max1.3W (Ta)