Gate Charge Qg Max / Vgs0.622 nC @ 4.5 V
Current / Continuous Drain Id / 25c460mA (Ta)
Vgs Max±6V
Vgsth Max / Id1V @ 250µA
Drive Voltage Max Rds On Min Rds On1.8V, 4.5V
Rds On Max / Id Vgs700mOhm @ 350mA, 4.5V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss20 V
Input Capacitance Ciss Max / Vds59.76 pF @ 16 V
Fet TypeP-Channel
Power Dissipation Max270mW (Ta)