Gate Charge Qg Max / Vgs34 nC @ 10 V
Current / Continuous Drain Id / 25c17A (Ta), 81A (Tc)
Vgs Max±20V
Vgsth Max / Id4V @ 27µA
Drive Voltage Max Rds On Min Rds On10V
Rds On Max / Id Vgs5.4mOhm @ 50A, 10V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss40 V
Input Capacitance Ciss Max / Vds2800 pF @ 20 V
Fet TypeN-Channel
Power Dissipation Max2.5W (Ta), 57W (Tc)