Gate Charge Qg Max / Vgs40 nC @ 10 V
Current / Continuous Drain Id / 25c16A (Ta), 73A (Tc)
Vgs Max±20V
Vgsth Max / Id2V @ 23µA
Drive Voltage Max Rds On Min Rds On4.5V, 10V
Rds On Max / Id Vgs5.9mOhm @ 50A, 10V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss40 V
Input Capacitance Ciss Max / Vds3200 pF @ 20 V
Fet TypeN-Channel
Power Dissipation Max2.5W (Ta), 50W (Tc)