Gate Charge Qg Max / Vgs1.5 nC @ 5 V
Current / Continuous Drain Id / 25c2.3A (Ta)
Vgs Max±20V
Vgsth Max / Id2V @ 11µA
Drive Voltage Max Rds On Min Rds On4.5V, 10V
Rds On Max / Id Vgs57mOhm @ 2.3A, 10V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss30 V
QualificationAEC-Q101
Input Capacitance Ciss Max / Vds275 pF @ 15 V
Fet TypeN-Channel
GradeAutomotive
Power Dissipation Max500mW (Ta)