Gate Charge Qg Max / Vgs2.9 nC @ 10 V
Current / Continuous Drain Id / 25c1.5A (Ta)
Vgs Max±20V
Vgsth Max / Id2V @ 6.3µA
Drive Voltage Max Rds On Min Rds On4.5V, 10V
Rds On Max / Id Vgs140mOhm @ 1.5A, 10V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss30 V
QualificationAEC-Q101
Input Capacitance Ciss Max / Vds294 pF @ 15 V
Fet TypeP-Channel
GradeAutomotive
Power Dissipation Max500mW (Ta)