Gate Charge Qg Max / Vgs1.5 nC @ 10 V
Current / Continuous Drain Id / 25c170mA (Ta)
Vgs Max±20V
Vgsth Max / Id2V @ 20µA
Drive Voltage Max Rds On Min Rds On4.5V, 10V
Rds On Max / Id Vgs8Ohm @ 170mA, 10V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss60 V
QualificationAEC-Q101
Input Capacitance Ciss Max / Vds19 pF @ 25 V
Fet TypeP-Channel
GradeAutomotive
Power Dissipation Max360mW (Ta)