Gate Charge Qg Max / Vgs30 nC @ 10 V
Current / Continuous Drain Id / 25c9A (Ta), 39.5A (Tc)
Vgs Max±25V
Vgsth Max / Id3.1V @ 48µA
Drive Voltage Max Rds On Min Rds On6V, 10V
Rds On Max / Id Vgs18mOhm @ 20A, 10V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss30 V
Input Capacitance Ciss Max / Vds2220 pF @ 15 V
Fet TypeP-Channel
Power Dissipation Max2.1W (Ta), 40W (Tc)