Gate Charge Qg Max / Vgs0.43 nC @ 4.5 V
Current / Continuous Drain Id / 25c190mA (Ta), 300mA (Tc)
Vgs Max±20V
Vgsth Max / Id2.1V @ 250µA
Drive Voltage Max Rds On Min Rds On5V, 10V
Rds On Max / Id Vgs4.5Ohm @ 100mA, 10V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss60 V
Input Capacitance Ciss Max / Vds20 pF @ 10 V
Fet TypeN-Channel
Power Dissipation Max265mW (Ta), 1.33W (Tc)