Gate Charge Qg Max / Vgs0.8 nC @ 4.5 V
Current / Continuous Drain Id / 25c360mA (Ta)
Vgs Max±20V
Vgsth Max / Id1.5V @ 250µA
Drive Voltage Max Rds On Min Rds On10V
Rds On Max / Id Vgs1.6Ohm @ 300mA, 10V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss60 V
QualificationAEC-Q101
Input Capacitance Ciss Max / Vds50 pF @ 10 V
Fet TypeN-Channel
GradeAutomotive
Power Dissipation Max350mW (Ta), 1.14W (Tc)