Gate Charge Qg Max / Vgs0.35 nC @ 5 V
Current / Continuous Drain Id / 25c180mA (Ta)
Vgs Max±20V
Vgsth Max / Id2.1V @ 250µA
Drive Voltage Max Rds On Min Rds On10V
Rds On Max / Id Vgs7.5Ohm @ 100mA, 10V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss50 V
QualificationAEC-Q101
Input Capacitance Ciss Max / Vds36 pF @ 25 V
Fet TypeP-Channel
GradeAutomotive
Power Dissipation Max350mW (Ta), 1.14W (Tc)