Gate Charge Qg Max / Vgs3.9 nC @ 4.5 V
Current / Continuous Drain Id / 25c1A (Ta)
Vgs Max±12V
Vgsth Max / Id1.15V @ 250µA
Drive Voltage Max Rds On Min Rds On4.5V
Rds On Max / Id Vgs200mOhm @ 1A, 4.5V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss20 V
Input Capacitance Ciss Max / Vds280 pF @ 10 V
Fet TypeP-Channel
Power Dissipation Max290mW (Ta), 1.67W (Tc)