Gate Charge Qg Max / Vgs0.7 nC @ 4.5 V
Current / Continuous Drain Id / 25c310mA (Ta)
Vgs Max±20V
Vgsth Max / Id2.5V @ 250µA
Drive Voltage Max Rds On Min Rds On4.5V, 10V
Rds On Max / Id Vgs1.6Ohm @ 500mA, 10V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss60 V
Input Capacitance Ciss Max / Vds24.5 pF @ 20 V
Fet TypeN-Channel
Power Dissipation Max280mW (Tj)