Gate Charge Qg Max / Vgs1 nC @ 4.5 V
Current / Continuous Drain Id / 25c500mA (Ta)
Vgs Max±20V
Vgsth Max / Id1.5V @ 250µA
Drive Voltage Max Rds On Min Rds On2.5V, 10V
Rds On Max / Id Vgs1.6Ohm @ 500mA, 10V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss50 V
Input Capacitance Ciss Max / Vds50 pF @ 25 V
Fet TypeN-Channel
Power Dissipation Max500mW (Ta)