Gate Charge Qg Max / Vgs1.2 nC @ 4 V
Current / Continuous Drain Id / 25c330mA (Ta)
Vgs Max±8V
Vgsth Max / Id1V @ 1mA
Drive Voltage Max Rds On Min Rds On1.5V, 4.5V
Rds On Max / Id Vgs1.31Ohm @ 100mA, 4.5V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss20 V
Input Capacitance Ciss Max / Vds43 pF @ 10 V
Fet TypeP-Channel
Power Dissipation Max150mW (Ta)