Gate Charge Qg Max / Vgs0.35 nC @ 4.5 V
Current / Continuous Drain Id / 25c200mA (Ta)
Vgs Max±20V
Vgsth Max / Id2.1V @ 250µA
Drive Voltage Max Rds On Min Rds On4.5V, 10V
Rds On Max / Id Vgs3.9Ohm @ 100mA, 10V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss60 V
Input Capacitance Ciss Max / Vds17 pF @ 10 V
Fet TypeN-Channel
Power Dissipation Max320mW (Ta)