Gate Charge Qg Max / Vgs16 nC @ 8 V
Current / Continuous Drain Id / 25c3.8A (Ta)
Vgs Max±8V
Vgsth Max / Id850mV @ 250µA
Drive Voltage Max Rds On Min Rds On1.5V, 4.5V
Rds On Max / Id Vgs37mOhm @ 1.5A, 4.5V
TechnologyMOSFET (Metal Oxide)
Drain To Source Voltage Vdss20 V
Input Capacitance Ciss Max / Vds620 pF @ 10 V
Fet TypeN-Channel
Power Dissipation Max780mW (Ta), 1.8W (Tc)